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 MPSW45, MPSW45A
MPSW45A is a Preferred Device
One Watt Darlington Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 BASE 2 Symbol MPSW45 MPSW45 VCES VCBO VEBO IC PD PD TJ, Tstg Value 40 50 50 60 12 1.0 1.0 8.0 2.5 20 -55 to +150 Unit Vdc Vdc Vdc Adc W mW/C W mW/C C 1 2 3 TO-92 (TO-226) CASE 29-10 STYLE 1 EMITTER 1
* Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating Collector -Emitter Voltage MPSW45A Collector -Base Voltage MPSW45A Emitter -Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W MPS W45x AYWW G G
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPSW45x = Device Code x = 45A Devices A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
1
February, 2006 - Rev. 3
Publication Order Number: MPSW45/D
MPSW45, MPSW45A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector -Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) Collector -Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) Base- Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) Base -Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) SMALL- SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. fT Ccb 100 - - 6.0 MHz pF hFE 25,000 15,000 4,000 VCE(sat) VBE(sat) VBE(on) - - - 150,000 - - 1.5 2.0 2.0 Vdc Vdc Vdc - MPSW45 MPSW45A IEBO V(BR)CES MPSW45 MPSW45A V(BR)CBO MPSW45 MPSW45A V(BR)EBO ICBO - - - 100 100 100 nAdc 50 60 12 - - - Vdc nAdc 40 50 - - Vdc Vdc Symbol Min Max Unit
RS
in en
IDEAL TRANSISTOR
Figure 1. Transistor Noise Model
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2
MPSW45, MPSW45A
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
500 200 100 10 mA 50 100 mA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 2.0 BANDWIDTH = 1.0 Hz i n, NOISE CURRENT (pA) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 100 mA 10 mA
BANDWIDTH = 1.0 Hz RS 0
en, NOISE VOLTAGE (nV)
IC = 1.0 mA
Figure 2. Noise Voltage
Figure 3. Noise Current
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
200 BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 mA
14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB)
100 70 50 30 20
10 10 mA 8.0 6.0 4.0 2.0 IC = 1.0 mA 100 mA
100 mA
1.0 mA 10
1.0
2.0
5.0
10 20 50 100 200 RS, SOURCE RESISTANCE (k)
500
1000
0 1.0
2.0
5.0
10 20 50 100 200 RS, SOURCE RESISTANCE (k)
500
1000
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
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3
MPSW45, MPSW45A
SMALL-SIGNAL CHARACTERISTICS
20 TJ = 25C |h fe |, SMALL-SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25C
C, CAPACITANCE (pF)
10 7.0 5.0
2.0
Cibo Cobo
1.0 0.8 0.6 0.4
3.0
2.0 0.04
0.1
0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS)
20
40
0.2 0.5
1.0
2.0
0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)
500
Figure 6. Capacitance
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. High Frequency Current Gain
200 k TJ = 125C hFE , DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
3.0 TJ = 25C 2.5 IC = 10 mA 50 mA 250 mA 500 mA
25C
2.0
1.5
-55 C VCE = 5.0 V
1.0 0.5 0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA)
500 1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
RV, TEMPERATURE COEFFICIENTS (mV/ C)
1.6 TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
-1.0 -2.0 -3.0
*APPLIES FOR IC/IB hFE/3.0 *RqVC FOR VCE(sat)
25C TO 125C
-55 C TO 25C
25C TO 125C -4.0 qVB FOR VBE -5.0 -6.0 5.0 7.0 10 -55 C TO 25C
0.8 0.6
VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
500
Figure 10. "On" Voltages
Figure 11. Temperature Coefficients
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4
MPSW45, MPSW45A
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 0.05 SINGLE PULSE
D = 0.5 0.2
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t)
200
500
1.0 k
2.0 k
5.0 k
10 k
Figure 12. Thermal Response
1.0 k 700 500 300 200 100 70 50 30 20 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.4 0.6 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 TA = 25C TC = 25C 1.0 s
1.0 ms 100 ms
FIGURE A tP PP PP
IC, COLLECTOR CURRENT (mA)
t1 1/f t DUTY CYCLE + t1 f + 1 tP PEAK PULSE POWER = PP
Figure 13. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
ORDERING INFORMATION
Device MPSW45 MPSW45G MPSW45RLRE MPSW45RLREG MPSW45A MPSW45AG MPSW45ARLRA MPSW45ARLRAG MPSW45AZL1 MPSW45AZL1G Package TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) Shipping 5,000 Units / Box 5,000 Units / Box 2,000 / Tape & Reel 2,000 / Tape & Reel 5,000 Units / Box 5,000 Units / Box 2,000 / Tape & Reel 2,000 / Tape & Reel 2,000 / Ammo Pack 2,000 / Ammo Pack
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com
5
MPSW45, MPSW45A
PACKAGE DIMENSIONS
TO-92 (TO-226) CASE 29-10 ISSUE AL
A
R P F L
B
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 3.43 ---
K
XX G H R
123
D J SECTION X-X
NC
N
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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6
MPSW45/D


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